Band Gap Measurement of CdTe, ZnTe AND CdZnTe II-VI Semiconducting Sintered Films: A Review
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Abstract
The sintered films configurations of ternary alloy of Cd, Zn and Te are emerging as an important class of material for optoelectronics applications due to their flexible electrical and optical properties. CdTe, ZnTe and CdZnTe are some of the very important II-VI semiconductor compounds. Ternary compounds are one option to vary the band gap of semiconductors almost continuously over a wide energy range. This method is highly dependent on the materials as well as the growth techniques. Especially materials with very different lattice constants or different crystal phases (wurtzite or zincblende in this case) are difficult to combine. Tensions and impurities due to low crystal quality result in low optoelectronic properties. Basically, it is possible to gain any band gap between those of the two materials. Consequently, it is possible to choose very specifically the wavelength of photons emitted by laser diodes or light emitting diodes.
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